Simulation of High Electron Concentration Channel Field-Effect Transistors
碩士 === 國立彰化師範大學 === 電子工程學系 === 98 === The purpose of this thesis is to simulate the high electron density channel field-effect transistor (FET). Based on the high electron mobility transistor (HEMT) with a high electron concentration InAsSb channel, we simulate the influences of the antimony (Sb) co...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29112212121772608336 |