Study Microstructure of InN on GaN Template With Different Thickness of Low-growth-rate GaN Buffer
碩士 === 國立彰化師範大學 === 光電科技研究所 === 98 === In this thesis, InN was grown on high quality GaN templates with inserting various thicknesses (0~60 nm) of low-growth-rate GaN (LG-GaN) buffers by molecular beam epitaxy (MBE). The crystal quality, microstructure variation and dislocation density of InN were a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/37064372137330049720 |