Effect of Passivation on double heterojunction bipolar transistors (DHBTs)

碩士 === 國立東華大學 === 材料科學與工程學系 === 98 === Due to the excellent microwave performances and current handing capability, heterojunction bipolar transistors (HBTs) have attracted considerable attention in wireless communication and power amplifier applications. In this thesis, the InGaP/GaAsSb/GaAs and InG...

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Bibliographic Details
Main Authors: Wen-Fu Yu, 余文賦
Other Authors: Yu-Shyan Lin
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/09092047082272423402