Investigation of Low Turn-on Voltage Heterojunction Bipolar Transistors
碩士 === 國立東華大學 === 材料科學與工程學系 === 98 === In this thesis, we use two methods to improve the common-emitter offset voltage. One is a new graded InGaP/GaAsSb heterostructure which an inserted graded layers between the emitter and base junction, and the other is delta-doped InGaP/GaAsSb which an inserted...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04523510769051066101 |