The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy
博士 === 國立中山大學 === 物理學系研究所 === 98 === The quality of GaN template layer plays a very important role in high electron mobility transistors. We proposed a special method in the growth of molecular beam epitaxy to deal with the dilemma between structure and the morphology of GaN. In our study, we used...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59850679302140518660 |