Optimization of HBT/pHEMT integration technology
博士 === 國立中山大學 === 電機工程學系研究所 === 98 === The InGaP Heterojunction Bipolor Transistors (HBTs) become known as the dominant technology in handset power amplifiers. Modern application requirements and size limitations have driven industry leaders towards the co-integration of enhance/depletion mode pHEMT...
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/92327930388865958989 |