Characteristics of a New Trench Oxide Layer Polysilicon Thin-Film Transistor and its 1T-DRAM Applications
碩士 === 國立中山大學 === 電機工程學系研究所 === 98 === In this thesis, we propose a simple trench oxide layer polysilicon thin-film Transistor (TO TFT) process and the self-heating effects can be significantly reduced because of its structural advantages. According to the ISE-TCAD simulation results, our proposed T...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62184136431112541817 |