Investigation on Device Characteristics of the InGaAs Pseudomorphic High Electron Mobility Transistors：RF I-V Curves and High Frequency Nonlinear Models Establishment
碩士 === 國立中山大學 === 電機工程學系研究所 === 98 === In this thesis, the investigation focuses on the analysis of the high frequency characteristics and the nonlinearity of the transistors. In view of the III-V semiconductors which have excellent high frequency performance and the advantage for high frequency cir...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77674678979767996271 |