Etching of SixNy and TiN Usning Inductively-Coupled Plasma Reactive Ion Etching: Study of Selectivity and Etching Rate of TiN with SC1 Wet Etching
碩士 === 國立清華大學 === 材料科學工程學系 === 98 === In order to make the lightly doped drain region structure Ⅲ-Ⅴ MOSFET self-aligned process well-controlled, information about dry etching and wet etching must be investigated. In this thesis, the dry etching of PECVD-SixNy and sputtered TiN was performed with ind...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06657099658319035261 |