Energy distribution of interfacial trap density in high κ dielectrics/In0.2Ga0.8As MOS and its impact on MOSFETs performance
碩士 === 國立清華大學 === 材料科學工程學系 === 98 === III-V InGaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs) with high-κ dielectrics are now a strong contender for tech-nologies beyond the 16 nm node complementary MOS (CMOS), due to the high electron mobility of InGaAs, 6-18 times than that o...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/04003891323178785428 |