Energy distribution of interfacial trap density in high κ dielectrics/In0.2Ga0.8As MOS and its impact on MOSFETs performance
碩士 === 國立清華大學 === 材料科學工程學系 === 98 === III-V InGaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs) with high-κ dielectrics are now a strong contender for tech-nologies beyond the 16 nm node complementary MOS (CMOS), due to the high electron mobility of InGaAs, 6-18 times than that o...
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ndltd-TW-098NTHU51591142015-11-04T04:01:50Z http://ndltd.ncl.edu.tw/handle/04003891323178785428 Energy distribution of interfacial trap density in high κ dielectrics/In0.2Ga0.8As MOS and its impact on MOSFETs performance 界面缺陷密度的能量分布於高介電常數材料/砷化銦鎵金氧半結構之研究 Lai, Lai-Hung 賴來宏 碩士 國立清華大學 材料科學工程學系 98 III-V InGaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs) with high-κ dielectrics are now a strong contender for tech-nologies beyond the 16 nm node complementary MOS (CMOS), due to the high electron mobility of InGaAs, 6-18 times than that of Si. Attain-ment of low interfacial trap densities (Dit) for the high-k dielec-trics/InGaAs MOS is critical for inversion-channel MOSFETs, so are the electrical measurements to characterize them. Quasi-static C-V (QS-CV) measurements were carried out on Al2O3/Ga2O3(Gd2O3)[GGO]/(n- and p-) In0.2Ga0.8As grown by molecular beam epitaxy (MBE) and Al2O3/(n- and p-)In0.2Ga0.8As grown by Atomic layer deposition (ALD), followed by the simulation to determine the Dit distribution. From the QS-CV measurements and simulations, the Dit dis-tribution within the band gap shows flat distribution in GGO/In0.2Ga0.8As, and Dit with a value of ~1012eV-1cm-2 was found. However, there is an obvious bump of Dit in the mid-gap of ALD Al2O3/In0.2Ga0.8As, and Dit is ~1013eV-1cm-2. After 850℃ RTA, midgap exhibits more interfacial traps, and Dit is ~5×1013eV-1cm-2. The electrical analysis proves that owing to efficacious passivation and higher thermal budget of InGaAs surface, MBE-GGO/InGaAs is the proper structure for MOSFETs. Hong, Minghwei Kwo, Raynien 洪銘輝 郭瑞年 2010 學位論文 ; thesis 92 en_US |
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碩士 === 國立清華大學 === 材料科學工程學系 === 98 === III-V InGaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs) with high-κ dielectrics are now a strong contender for tech-nologies beyond the 16 nm node complementary MOS (CMOS), due to the high electron mobility of InGaAs, 6-18 times than that of Si. Attain-ment of low interfacial trap densities (Dit) for the high-k dielec-trics/InGaAs MOS is critical for inversion-channel MOSFETs, so are the electrical measurements to characterize them.
Quasi-static C-V (QS-CV) measurements were carried out on Al2O3/Ga2O3(Gd2O3)[GGO]/(n- and p-) In0.2Ga0.8As grown by molecular beam epitaxy (MBE) and Al2O3/(n- and p-)In0.2Ga0.8As grown by Atomic layer deposition (ALD), followed by the simulation to determine the Dit distribution. From the QS-CV measurements and simulations, the Dit dis-tribution within the band gap shows flat distribution in GGO/In0.2Ga0.8As, and Dit with a value of ~1012eV-1cm-2 was found. However, there is an obvious bump of Dit in the mid-gap of ALD Al2O3/In0.2Ga0.8As, and Dit is ~1013eV-1cm-2. After 850℃ RTA, midgap exhibits more interfacial traps, and Dit is ~5×1013eV-1cm-2. The electrical analysis proves that owing to efficacious passivation and higher thermal budget of InGaAs surface, MBE-GGO/InGaAs is the proper structure for MOSFETs.
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author2 |
Hong, Minghwei |
author_facet |
Hong, Minghwei Lai, Lai-Hung 賴來宏 |
author |
Lai, Lai-Hung 賴來宏 |
spellingShingle |
Lai, Lai-Hung 賴來宏 Energy distribution of interfacial trap density in high κ dielectrics/In0.2Ga0.8As MOS and its impact on MOSFETs performance |
author_sort |
Lai, Lai-Hung |
title |
Energy distribution of interfacial trap density in high κ dielectrics/In0.2Ga0.8As MOS and its impact on MOSFETs performance |
title_short |
Energy distribution of interfacial trap density in high κ dielectrics/In0.2Ga0.8As MOS and its impact on MOSFETs performance |
title_full |
Energy distribution of interfacial trap density in high κ dielectrics/In0.2Ga0.8As MOS and its impact on MOSFETs performance |
title_fullStr |
Energy distribution of interfacial trap density in high κ dielectrics/In0.2Ga0.8As MOS and its impact on MOSFETs performance |
title_full_unstemmed |
Energy distribution of interfacial trap density in high κ dielectrics/In0.2Ga0.8As MOS and its impact on MOSFETs performance |
title_sort |
energy distribution of interfacial trap density in high κ dielectrics/in0.2ga0.8as mos and its impact on mosfets performance |
publishDate |
2010 |
url |
http://ndltd.ncl.edu.tw/handle/04003891323178785428 |
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