Pentacene-based Organic Thin Film Transistors with Aluminum Nitride Gate Dielectric - Aging and Substrate Temperature Effect

碩士 === 國立清華大學 === 材料科學工程學系 === 98 === In this thesis, aluminum nitride is used as gate dielectric in organic thin film transistor, the main content can be divided into two parts: the aging effect on AlN and the substrate thermal effect during evaporation of pentacene. Taking the as-deposited AlN...

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Bibliographic Details
Main Author: 王文杰
Other Authors: 黃振昌
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/83429034380056312367