Field-Induced Second Harmonic Generation of High-k Gate Dielectric/Si (Ge) Heterointerface
碩士 === 國立清華大學 === 物理學系 === 98 === As the scaling of the silicon metal-oxide-semiconductor (MOS) transistor approaches the fundamental limit due to the quantum tunneling effect, the innovative high-k oxide, e.g. Ga2O3(Gd2O3)[GGO], plays an important role to continue the historic progress in microelec...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/50956179560801694138 |