Functionalized InN Ion Sensitive Field Effect Transistor for DNA Hybridization Detection
碩士 === 國立清華大學 === 電子工程研究所 === 98 === Ultrathin (~10 nm) InN ion sensitive field effect transistors (ISFETs) with gate region modified with 3-mercaptopropyltrimethoxysilane (MPTMS) by molecular vapor deposition (MVD) are used to detect hybridization of deoxyribonucleic acid (DNA). The ultrathin InN I...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95330037766217168668 |