Study of Drain Leakage Current Suppression Method for LTPS TFTs
碩士 === 國立清華大學 === 電子工程研究所 === 98 === LTPS-TFTs, due to the high density defects located at the grain boundary and the in-grain as well as sharper drain junction, exhibit unique off-sate leakage current characteristics. The two-dimensional process simulator was adopted for constructing the poly-Si TF...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69885569746691550537 |