Study of HfO2 Based Resistive Memory
博士 === 國立清華大學 === 電子工程研究所 === 98 === The purpose of this thesis is to develop a reliable HfO2 based resistive memory for the next generation nonvolatile memory application. In order to find the process factor to determine the resistance switch, the effect of electrode metal and anneal process on the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/53056070826137167881 |