Integration of Metal Gate Electrode and High-K Gate dielectric for Improved SRAM Unit Cell Stability
博士 === 國立清華大學 === 工程與系統科學系 === 98 === To continuously improve device performance with the shrinkage of device dimension, some novel devices like the fully-depleted silicon-on-insulator (FD-SOI) and symmetric double gate (SDG) transistor have been proposed. Various HfxTaySizN metal gate electrodes we...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58923094513505848978 |