Effects of the Surface Treatment on P-type GaN and a Novel Fabrication of Phosphor-free Mix-color LEDs

碩士 === 國立臺南大學 === 光電工程研究所 === 98 === In this study, a reduction of Ni/Au ohmic contact resistivity on p-GaN was obtained by surface treatment using N2 plasma. It has been shown that an improvement of contact resistivity can be achieved through a proper using of N2 plasma pre-treatment. The current s...

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Bibliographic Details
Main Authors: Yu-ming Gong, 龔鈺茗
Other Authors: Shih-chang Sheu
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/77752355807056308408