Effects of the Surface Treatment on P-type GaN and a Novel Fabrication of Phosphor-free Mix-color LEDs
碩士 === 國立臺南大學 === 光電工程研究所 === 98 === In this study, a reduction of Ni/Au ohmic contact resistivity on p-GaN was obtained by surface treatment using N2 plasma. It has been shown that an improvement of contact resistivity can be achieved through a proper using of N2 plasma pre-treatment. The current s...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77752355807056308408 |