Electrical Properties and Leakage Current Mechanism of Y2O3 Gate Dielectrics
碩士 === 國立臺灣師範大學 === 機電科技研究所 === 98 === Ultra-thin yttrium oxide (Y2O3) films were deposited on p-Si(100) substrates by RF sputtering in argon (Ar) ambient at room temperature. The physical thickness of the films was around 7 nm. After deposition, a post-deposition annealing (PDA) in nitrogen (N2) am...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20200751402253909665 |