Effect of Thermal Annealing On Multicrystalline Silicon For Photovoltaic Applications
碩士 === 國立臺灣大學 === 化學工程學研究所 === 98 === We propose and demonstrate an easy method to remove dislocation limited solar cell performance in multicrystalline silicon solar material. Over 97.5% dislocation density reduction was achieved after annealing at 1350℃ for 6 hours with controlled ambient. The res...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/80033621684656010486 |