Optoelectronic properties of single nanowire field effect transistor
碩士 === 國立臺灣大學 === 物理研究所 === 98 === Fabrication of single nanowire devices and their optoelectronic properties and field effect transistor (FET) characteristics are reported in this thesis. Vapor-liquid-solid growth (VLS) and metal organic chemical vapor deposition (MOCVD) were used to grow three dif...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87889662941355106073 |