Studies on GaAsSb/GaAs type-II quantum well with an adjacent InAs quantum dot layer and its application to laser diodes
碩士 === 臺灣大學 === 電子工程學研究所 === 98 === In this study, GaAs0.7Sb0.3/GaAs type-II quantum well lasers with an adjacent InAs quantum dot layer have been fabricated by gas-source molecular beam epitaxy. We found that the composite structure can decrease the threshold current density and the internal loss,...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06751048582835847747 |