Agglomerate Germanium quantum dot from different evaporated Germanium thin film thickness by laser annealing
碩士 === 臺灣大學 === 電子工程學研究所 === 98 === In our study, we used Ge nanocrystals embedded in SiO2 as the floating gate, create three layers of MOS devices. First, we use e-gun deposition a layer of amorphous Ge thin film, divided into three different thickness, on silicon dioxide. And then useing of exci...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12957881543389046204 |