Fabrication and Optoelectronic Characterization of InAsPSb/InAs Mid-infrared Photodetectors
碩士 === 臺灣大學 === 電子工程學研究所 === 98 === We study the fabrication and the properties of InAsPSb/InAs heterojunction p-i-n (p-InAsPSb/i-InAs/n-InAs) photodetectors. Three structures with different i layer thickness of 0.75 μm (C2759), 1.5 μm (C2758), 2 μm (C2866) were grown by gas source molecular beam...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95305693903876143787 |