Fabrication and Optoelectronic Characterization of InAsPSb/InAs Mid-infrared Photodetectors

碩士 === 臺灣大學 === 電子工程學研究所 === 98 ===   We study the fabrication and the properties of InAsPSb/InAs heterojunction p-i-n (p-InAsPSb/i-InAs/n-InAs) photodetectors. Three structures with different i layer thickness of 0.75 μm (C2759), 1.5 μm (C2758), 2 μm (C2866) were grown by gas source molecular beam...

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Bibliographic Details
Main Authors: Shih-Wei Lo, 羅世為
Other Authors: 林浩雄
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/95305693903876143787

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