The Investigation of Strained Si/Ge-Based MOS Devices and Charge Storage Memories
博士 === 國立臺灣大學 === 電子工程學研究所 === 98 === Strain technology is the most important technique in the current CMOS process, which can enhance the carrier mobilities in the channel region. On the other hand, the memory device is the most demanding driving force for the scaling. In the first part of the diss...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/68175709217266642416 |