Nanowire Transistors
碩士 === 臺灣大學 === 電機工程學研究所 === 98 === The electrical and optical properties of the ZnO nanowires (NWs) have been investigated through back gate field effect transistors (FET) fabricated by photolithographic process and e-beam lithography. The electrical behavior has been characterized by the output an...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/80537999193220287294 |