Longitudinal Patent Analysis for Chemical Mechanical Polishing Pad
碩士 === 國立臺灣大學 === 圖書資訊學研究所 === 98 === As the feature sizes of Integrated Circuits continue to shrink, the ability to globally planarize the wafer surface becomes increasingly important. The Chemical Mechanical Polishing or Planarization (CMP) is regarded as the most successful planarization process...
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ndltd-TW-098NTU054480152015-11-02T04:04:01Z http://ndltd.ncl.edu.tw/handle/49984018482904859883 Longitudinal Patent Analysis for Chemical Mechanical Polishing Pad 化學機械研磨墊專利發展趨勢分析 Ching-Yin Kao 高靜吟 碩士 國立臺灣大學 圖書資訊學研究所 98 As the feature sizes of Integrated Circuits continue to shrink, the ability to globally planarize the wafer surface becomes increasingly important. The Chemical Mechanical Polishing or Planarization (CMP) is regarded as the most successful planarization process in IC fabrication. CMP has the capability to achieve global planarization of interlayered dielectrics and metal films and its relative cost-effectiveness. The CMP Pad is one of the most important consumables in CMP and has a critical effect on achieving controlled material removal and uniformity. The objective of this study is to learn the CMP Pad development trend by using patent analysis first, including the number of patents, countries, companies, industries and technical classifications. Second, it’s to learn the CMP Pad technological knowledge spillover and flow by using patent citation analysis, including the countries, companies, industries and technical classifications. Achievement of this study includes the following items: (1) USA is the leading country of CMP Pad technologies. (2) Rohm & Haas Co. is the leading company of CMP Pad technologies. (3) The Semiconductors and Related Devices industry (3674)published the most CMP Pad patents. (4) The CMP Pad technologies are focused on B24B and B24D of IPC, B24B 37/04 especially. (5) There is the geographic localization of knowledge spillover on the patent citations in US. (6) There are two-way knowledge flows among US, JP, TW and KR, between US and JP especially. (7) There are two-way knowledge flows among Rohm & Haas Co., Micron Technology, Inc., Applied Materials, Inc. and IBM Corp.. (8) There are two-way knowledge flows between Taiwan Semiconductor Manufacturing Co., Ltd. and Applied Materials, Inc., United Microelectronics Corp. and Applied Materials, Inc., Macronix International Co., Ltd. and Applied Materials, Inc.. (9) There are two-way knowledge flows among 7379, 3674 and 2821 SIC; 3559, 3674 and 3663 SIC; 3559, 3674 and 7379 SIC; 3559, 3674 and 2821 SIC. (10) There are two-way knowledge flows among B24B 37/04, B24D 3/20 and B24D 7/12 IPC; B24B 37/04, B24D 3/20 and B24D 3/34 IPC. Pao-Nuan Hsieh 謝寶煖 2010 學位論文 ; thesis 212 zh-TW |
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碩士 === 國立臺灣大學 === 圖書資訊學研究所 === 98 === As the feature sizes of Integrated Circuits continue to shrink, the ability to globally planarize the wafer surface becomes increasingly important. The Chemical Mechanical Polishing or Planarization (CMP) is regarded as the most successful planarization process in IC fabrication. CMP has the capability to achieve global planarization of interlayered dielectrics and metal films and its relative cost-effectiveness. The CMP Pad is one of the most important consumables in CMP and has a critical effect on achieving controlled material removal and uniformity. The objective of this study is to learn the CMP Pad development trend by using patent analysis first, including the number of patents, countries, companies, industries and technical classifications. Second, it’s to learn the CMP Pad technological knowledge spillover and flow by using patent citation analysis, including the countries, companies, industries and technical classifications.
Achievement of this study includes the following items: (1) USA is the leading country of CMP Pad technologies. (2) Rohm & Haas Co. is the leading company of CMP Pad technologies. (3) The Semiconductors and Related Devices industry (3674)published the most CMP Pad patents. (4) The CMP Pad technologies are focused on B24B and B24D of IPC, B24B 37/04 especially. (5) There is the geographic localization of knowledge spillover on the patent citations in US. (6) There are two-way knowledge flows among US, JP, TW and KR, between US and JP especially. (7) There are two-way knowledge flows among Rohm & Haas Co., Micron Technology, Inc., Applied Materials, Inc. and IBM Corp.. (8) There are two-way knowledge flows between Taiwan Semiconductor Manufacturing Co., Ltd. and Applied Materials, Inc., United Microelectronics Corp. and Applied Materials, Inc., Macronix International Co., Ltd. and Applied Materials, Inc.. (9) There are two-way knowledge flows among 7379, 3674 and 2821 SIC; 3559, 3674 and 3663 SIC; 3559, 3674 and 7379 SIC; 3559, 3674 and 2821 SIC. (10) There are two-way knowledge flows among B24B 37/04, B24D 3/20 and B24D 7/12 IPC; B24B 37/04, B24D 3/20 and B24D 3/34 IPC.
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author2 |
Pao-Nuan Hsieh |
author_facet |
Pao-Nuan Hsieh Ching-Yin Kao 高靜吟 |
author |
Ching-Yin Kao 高靜吟 |
spellingShingle |
Ching-Yin Kao 高靜吟 Longitudinal Patent Analysis for Chemical Mechanical Polishing Pad |
author_sort |
Ching-Yin Kao |
title |
Longitudinal Patent Analysis for Chemical Mechanical Polishing Pad |
title_short |
Longitudinal Patent Analysis for Chemical Mechanical Polishing Pad |
title_full |
Longitudinal Patent Analysis for Chemical Mechanical Polishing Pad |
title_fullStr |
Longitudinal Patent Analysis for Chemical Mechanical Polishing Pad |
title_full_unstemmed |
Longitudinal Patent Analysis for Chemical Mechanical Polishing Pad |
title_sort |
longitudinal patent analysis for chemical mechanical polishing pad |
publishDate |
2010 |
url |
http://ndltd.ncl.edu.tw/handle/49984018482904859883 |
work_keys_str_mv |
AT chingyinkao longitudinalpatentanalysisforchemicalmechanicalpolishingpad AT gāojìngyín longitudinalpatentanalysisforchemicalmechanicalpolishingpad AT chingyinkao huàxuéjīxièyánmódiànzhuānlìfāzhǎnqūshìfēnxī AT gāojìngyín huàxuéjīxièyánmódiànzhuānlìfāzhǎnqūshìfēnxī |
_version_ |
1718120041580331008 |