Longitudinal Patent Analysis for Chemical Mechanical Polishing Pad

碩士 === 國立臺灣大學 === 圖書資訊學研究所 === 98 === As the feature sizes of Integrated Circuits continue to shrink, the ability to globally planarize the wafer surface becomes increasingly important. The Chemical Mechanical Polishing or Planarization (CMP) is regarded as the most successful planarization process...

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Main Authors: Ching-Yin Kao, 高靜吟
Other Authors: Pao-Nuan Hsieh
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/49984018482904859883
id ndltd-TW-098NTU05448015
record_format oai_dc
spelling ndltd-TW-098NTU054480152015-11-02T04:04:01Z http://ndltd.ncl.edu.tw/handle/49984018482904859883 Longitudinal Patent Analysis for Chemical Mechanical Polishing Pad 化學機械研磨墊專利發展趨勢分析 Ching-Yin Kao 高靜吟 碩士 國立臺灣大學 圖書資訊學研究所 98 As the feature sizes of Integrated Circuits continue to shrink, the ability to globally planarize the wafer surface becomes increasingly important. The Chemical Mechanical Polishing or Planarization (CMP) is regarded as the most successful planarization process in IC fabrication. CMP has the capability to achieve global planarization of interlayered dielectrics and metal films and its relative cost-effectiveness. The CMP Pad is one of the most important consumables in CMP and has a critical effect on achieving controlled material removal and uniformity. The objective of this study is to learn the CMP Pad development trend by using patent analysis first, including the number of patents, countries, companies, industries and technical classifications. Second, it’s to learn the CMP Pad technological knowledge spillover and flow by using patent citation analysis, including the countries, companies, industries and technical classifications. Achievement of this study includes the following items: (1) USA is the leading country of CMP Pad technologies. (2) Rohm & Haas Co. is the leading company of CMP Pad technologies. (3) The Semiconductors and Related Devices industry (3674)published the most CMP Pad patents. (4) The CMP Pad technologies are focused on B24B and B24D of IPC, B24B 37/04 especially. (5) There is the geographic localization of knowledge spillover on the patent citations in US. (6) There are two-way knowledge flows among US, JP, TW and KR, between US and JP especially. (7) There are two-way knowledge flows among Rohm & Haas Co., Micron Technology, Inc., Applied Materials, Inc. and IBM Corp.. (8) There are two-way knowledge flows between Taiwan Semiconductor Manufacturing Co., Ltd. and Applied Materials, Inc., United Microelectronics Corp. and Applied Materials, Inc., Macronix International Co., Ltd. and Applied Materials, Inc.. (9) There are two-way knowledge flows among 7379, 3674 and 2821 SIC; 3559, 3674 and 3663 SIC; 3559, 3674 and 7379 SIC; 3559, 3674 and 2821 SIC. (10) There are two-way knowledge flows among B24B 37/04, B24D 3/20 and B24D 7/12 IPC; B24B 37/04, B24D 3/20 and B24D 3/34 IPC. Pao-Nuan Hsieh 謝寶煖 2010 學位論文 ; thesis 212 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立臺灣大學 === 圖書資訊學研究所 === 98 === As the feature sizes of Integrated Circuits continue to shrink, the ability to globally planarize the wafer surface becomes increasingly important. The Chemical Mechanical Polishing or Planarization (CMP) is regarded as the most successful planarization process in IC fabrication. CMP has the capability to achieve global planarization of interlayered dielectrics and metal films and its relative cost-effectiveness. The CMP Pad is one of the most important consumables in CMP and has a critical effect on achieving controlled material removal and uniformity. The objective of this study is to learn the CMP Pad development trend by using patent analysis first, including the number of patents, countries, companies, industries and technical classifications. Second, it’s to learn the CMP Pad technological knowledge spillover and flow by using patent citation analysis, including the countries, companies, industries and technical classifications. Achievement of this study includes the following items: (1) USA is the leading country of CMP Pad technologies. (2) Rohm & Haas Co. is the leading company of CMP Pad technologies. (3) The Semiconductors and Related Devices industry (3674)published the most CMP Pad patents. (4) The CMP Pad technologies are focused on B24B and B24D of IPC, B24B 37/04 especially. (5) There is the geographic localization of knowledge spillover on the patent citations in US. (6) There are two-way knowledge flows among US, JP, TW and KR, between US and JP especially. (7) There are two-way knowledge flows among Rohm & Haas Co., Micron Technology, Inc., Applied Materials, Inc. and IBM Corp.. (8) There are two-way knowledge flows between Taiwan Semiconductor Manufacturing Co., Ltd. and Applied Materials, Inc., United Microelectronics Corp. and Applied Materials, Inc., Macronix International Co., Ltd. and Applied Materials, Inc.. (9) There are two-way knowledge flows among 7379, 3674 and 2821 SIC; 3559, 3674 and 3663 SIC; 3559, 3674 and 7379 SIC; 3559, 3674 and 2821 SIC. (10) There are two-way knowledge flows among B24B 37/04, B24D 3/20 and B24D 7/12 IPC; B24B 37/04, B24D 3/20 and B24D 3/34 IPC.
author2 Pao-Nuan Hsieh
author_facet Pao-Nuan Hsieh
Ching-Yin Kao
高靜吟
author Ching-Yin Kao
高靜吟
spellingShingle Ching-Yin Kao
高靜吟
Longitudinal Patent Analysis for Chemical Mechanical Polishing Pad
author_sort Ching-Yin Kao
title Longitudinal Patent Analysis for Chemical Mechanical Polishing Pad
title_short Longitudinal Patent Analysis for Chemical Mechanical Polishing Pad
title_full Longitudinal Patent Analysis for Chemical Mechanical Polishing Pad
title_fullStr Longitudinal Patent Analysis for Chemical Mechanical Polishing Pad
title_full_unstemmed Longitudinal Patent Analysis for Chemical Mechanical Polishing Pad
title_sort longitudinal patent analysis for chemical mechanical polishing pad
publishDate 2010
url http://ndltd.ncl.edu.tw/handle/49984018482904859883
work_keys_str_mv AT chingyinkao longitudinalpatentanalysisforchemicalmechanicalpolishingpad
AT gāojìngyín longitudinalpatentanalysisforchemicalmechanicalpolishingpad
AT chingyinkao huàxuéjīxièyánmódiànzhuānlìfāzhǎnqūshìfēnxī
AT gāojìngyín huàxuéjīxièyánmódiànzhuānlìfāzhǎnqūshìfēnxī
_version_ 1718120041580331008