Low Temperature Growth of InGaN Nanowires by TEGa/TMIn/DMHy MOCVD System
碩士 === 國立臺灣科技大學 === 化學工程系 === 98 === InGaN nanowires were synthesized on Si (111) by metalorganic vapor deposition (MOCVD) at temperatures lower than 600oC. Trimethylgallium, trimethylindium and dimethylhydrazine were employed as precursor which offer low temperature growth due to low thermal decomp...
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55167960914151511280 |