| Summary: | 碩士 === 國立臺灣科技大學 === 化學工程系 === 98 === InGaN nanowires were synthesized on Si (111) by metalorganic vapor deposition (MOCVD) at temperatures lower than 600oC. Trimethylgallium, trimethylindium and dimethylhydrazine were employed as precursor which offer low temperature growth due to low thermal decomposition characteristics. This newly proposed reaction system has a great promise for energy application on soft substrates (such as ITO, AZO). Moreover, the effect of growth temperature, growth pressure, hydrogen gas ambient, and trimethylindium flow rate in InGaN growth were investigated.
InGaN nanowires were obtained at 450oC under hydrogen ambient with a TMIn flow rate of 1.42 µmol/min. TEM results show that the synthesized nanowires have core-shell structure. Indium localizes in the core and gallium in the shell was confirmed by EDX. PL spectra show emission at 467 and 400 nm corresponding to InGaN-GaN nanowires core-shell structures. The results also suggested that an indium content as ca. 20%. Further effort on looking for detailed phenomena in the formation of InGaN nanowires core-shell structure was also proposed.
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