Optical characterization of GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum dot composite structures
碩士 === 國立臺灣科技大學 === 電子工程系 === 98 === Due to the type II band alignment, the electron and hole in a GaAsSb/GaAs strained quantum well (QW) are spatially separated. This configuration leads to the fundamental transition energy of QW being lower than the band gaps of the barrier and well. It is a great...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70895129195511656265 |