Fabrication and Characterization of GaN Light Emitting Diodes with SiO2 Current-Blocking Layer
碩士 === 國立臺灣科技大學 === 電子工程系 === 98 === Improving non-uniform current spreading of GaN light emitting diodes (LED) to obtain high light-output efficiency is one of the most important issues in the LED industry. Because sapphire is an insulating substrate, both the p-type and n-type contacts are usually...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/09401791361085663582 |