Design of SiGe BiCMOS active-inductor ILFDs
碩士 === 國立臺灣科技大學 === 電子工程系 === 98 === We propose three active-inductor injection locked frequency divider(ILFD) circuits in this thesis. The first structure is using 0.35 μm SiGe 3P3M BiCMOS technology to present a divide-by-3 ILFD. Measurement results show that when supply voltage is 3.0 V, the free...
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97976919560976069756 |