| Summary: | 碩士 === 國立聯合大學 === 電機工程學系碩士班 === 98 === In this study, effects of electrical and physical properties of ZnO-doped ZnO-doped Nd(Co1/2Ti1/2)O3 thin films by rf magnetron sputtering have been investigated. All of the films were deposited at a fixed operating pressure of 5 mTorr and a deposition time of 5 min with different rf powers (250W~450W), substrate temperatures (150oC~350oC), argon-oxygen (Ar/O2) ratios (100/0~80/20) and annealing temperatures (600oC and 700oC). The surface structural and morphological characteristics analyzed by X-ray diffraction, scanning electron microscopy and atomic force microscope were found to be sensitive to the processing conditions. The optical transmittance spectra of the ZnO-doped Nd(Co1/2Ti1/2)O3/ITO/Glass were measured by using UV-visible recording spectrophotometer. The electrical properties of the ZnO-doped Nd(Co1/2Ti1/2)O3 thin films were evaluated by capacitance-voltage (C–V) and current-voltage (I–V) measurements. The C-V and the I-V curves of the MIM (Pt/ZnO-doped Nd(Co1/2Ti1/2)O3/ITO/Glass) capacitors were measured by using a HP4192 Impedance Analyzer and a HP4155 Parameter Analyzer, respectively.
Excellent dielectric properties (a dielectric constant of 30.45 (f = 1 kHz), a dissipation factor of 0.016 and a leakage current density of 5.19×10-9 A/cm2 at the electrical field of 100 kV/cm) can be obtained for the ZnO-doped Nd(Co1/2Ti1/2)O3 film without heat treatment at a rf power of 250W, a substrate temperature of 250oC and a Ar/O2 ratio of 90/10.
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