Fabrication and Characterization of HfO2 High-K Gate Insulator for Transparent ZnO Thin-Film Transistors on Glass and Plastic Substrates
碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 98 === In the study, fabricating of HfO2 high-K gate insulator for ZnO thin-film transistors on glass and plastic substrates, we fabricate bottom-gate structure using ZnO film as an active channel layer and HfO2 as gate insulator and ITO as the gate, source, and d...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6fuq8a |