Growth of Solar Graded Single Crystalline Silicon by Crystalline Czochralski Method
碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 98 === This study investigates the influence of temperature, seed pulling rate, diameter control, and rising speeds and rotating rate of crucible on the solid - liquid interface quality during the growth of single crystal by Czochralski method.。 In this study, re...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/um4g4r |