5 nm of Ru-(Ta)-B diffusion barrier layer and copper processing characteristics
碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所 === 98 === Thin films were deposited on Si substrates by magnetron sputtering. 5 nm Ru-B, Ta-B and Ru-Ta-B were prepared on the Si substrate as diffusion barrier, and then the Cu/barrier/Si scheme was annealed in Ar+H2 (5%) and at a temperature between 200℃ and 750...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/tax9ct |