Electrical and Reliability Characteristics of Advanced Metal-Oxide-Semiconductor Capacitors with Various Ti- and Al-doped HfLaON Dielectrics
碩士 === 國立虎尾科技大學 === 機械與機電工程研究所 === 98 === High-dielectric-constant (high-k) gate oxides with larger physical thickness while identical equivalent-oxide-thickness (EOT) have been widely used to supersede SiO2 for reducing gate leakage current in metal-oxide-semiconductor (MOS) devices. In this t...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/5ctn7h |