Preparation and Characteristic of Metal Oxide Resistive Switching Memories
碩士 === 南台科技大學 === 電子工程系 === 98 === Resistance Random Access Memories (RRAM) exhibit the advantages of fast read/write access speed, simple structure, small unit area, high-density, low operating voltage, low consumed electric energy, high operating cycles, and non-volatile properties. Furthermore, t...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04297079072747063671 |