The research wafer surface cleanser and does in the eclipse cutting regulation to the wet etching the GaAs surface etching condition and the relative electro tropism influence.
碩士 === 國立臺北科技大學 === 化學工程研究所 === 98 === This experiment mainly makes use of dissimilarity kind the chemicals(like NH4 OHses, HCL, and HF...etc.) is the detergent of dry wet etching pre-baking, mainly is develop a photo-resist behind know that the oxide does to effectively clean to avoid an etching in...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/rc3q2v |
| Summary: | 碩士 === 國立臺北科技大學 === 化學工程研究所 === 98 === This experiment mainly makes use of dissimilarity kind the chemicals(like NH4 OHses, HCL, and HF...etc.) is the detergent of dry wet etching pre-baking, mainly is develop a photo-resist behind know that the oxide does to effectively clean to avoid an etching incompletion the creation of phenomemon, cause the creation of convex wafer surface dot or black spot, experiment medium can by dry etching and wet etching manufacturing process the variety understands in the process that it gives or gets an electric shock sex variety.
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