Carrier Mobility for MOSFET Using SiGe-Source/Drain on (110) Wafer Surface
碩士 === 國立臺北科技大學 === 機電整合研究所 === 98 === In many strained methods, the process of SiGe-S/D has been worth applying. Nevertheless, the mechanism and characteristic were not so clear by applying on (110) wafer surfaces. For past five years, some studies of the temperature dependence on MOSFET devices...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/93rxe4 |