Carrier Mobility for MOSFET Using SiGe-Source/Drain on (110) Wafer Surface

• Main Authors: Wei-Luen Huang, 黃偉倫
• Other Authors: Shuang-Yuan Chen
• Format: Others
• Language: en_US
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/93rxe4

碩士 === 國立臺北科技大學 === 機電整合研究所 === 98 === In many strained methods, the process of SiGe-S/D has been worth applying. Nevertheless, the mechanism and characteristic were not so clear by applying on (110) wafer surfaces. For past five years, some studies of the temperature dependence on MOSFET devices have been investigated. Moreover, the scattering mechanism has been investigated to the strained MOSFETs. However, the SiGe-S/D with temperature dependence of channel lengths were less mentioned in the previous references. Therefore, it would use the devices of SiGe-S/D, Si-S/D, and control to discuss the carrier mobility on the temperature dependence. The temperatures are 25 o C and 125 o C. In the experiment, the drive current and mobility are created with different lengths at two temperatures. The results indicates that the carrier mobility is degraded by the temperature increasing. The phonon scattering is an important factor. Moreover, the long channel of the temperature effect is higher than the short channel. The factor is not only the effect of phonon scattering but also the probability of the impact to the lattice is higher than the short channel. On the other hand, the tensile strain of n-MOSFET or the compressive strain of p-MOSFET makes the temperature dependence increases gradually.