Fabrication of ZnO (002) thin films grown by PECVD

• Main Authors: Yu-An Kuo, 郭育安
• Other Authors: 魏大華
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/f99fs4

碩士 === 國立臺北科技大學 === 機電整合研究所 === 98 === The wurtzite ZnO thin films with c-axis (0002) preferred orientation have been successfully grown on the Si(100) and glass substrates by plasma enhanced chemical vapor deposition (PECVD) using diethylzinc (DEZn) liquid and carbon dioxide (CO2) gas as the Zn and O sources, respectively. This thesis is focused on the synthesized conditions for forming (0002) textured ZnO films by varying the fabrication parameters during film growth process. The changed parameters in the synthesized processes of ZnO phase including the CO2 gas flows (6~20 sccm), substrate temperature (250~450 oC), radio frequency (RF) power (30~70 W), and working pressure (500~1000 mTorr). The optimized conditions for fabricating c-axis ZnO (0002) epitaxial films with the narrow full width at half maximum (FWHM) value of about 0.151o onto silicon and glass substrates are at working pressure of 500 mTorr, substrate temperature of 400 oC, RF power of 60 W, and CO2 flow of 20 sccm, respectively. The FWHM values decrease with increasing the working power and substrate temperature, indicating the extra energy is important for forming c-axis alignment of ZnO films. On the other hand, the surface roughness increases with increasing the values of CO2 flow, RF power, and substrate temperature, respectively. From the photoluminescence (PL) and Raman spectra, the typical intrinsic UV-band emitted peak is appeared and located at about 380 nm and 437 cm-1, indicating the ZnO phase formed. The transmission spectrum shows the highly transmissive ability (over 85%) in the visible region (400~800 nm) that shown the possibility for the future applications of display and optoelectronic devices.