Characterization of Strained MOSFETs with Compressive and Tensile CESL Stressors
碩士 === 國立臺北科技大學 === 機電整合研究所 === 98 === CESL stressor of uni-axial strained-Si technology is to deposit SiN layer on the MOSFETs devices. The device performance can be improved due to the mechanical stress produced by the SiN capping layer. From previous literatures, CESL stressor with global str...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3s4q94 |