Implementation of On-the-fly Technique Using Agilent 4156C
碩士 === 國立臺北科技大學 === 機電整合研究所 === 98 === There is a recovery when using traditional method to measure the NBTI effect. The recovery will affect the degradation of pMOSFETs and consequently the estimated lifetime of the devices. The on-the-fly technique is developed to reduce the effect of recovery. Th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/jy37ue |