The Development of Low Temperature Microcrystalline Silicon Thin-Film Transistors
碩士 === 大同大學 === 光電工程研究所 === 98 === In this study, we deposited pad-silicon, incubation-silicon, and microcrystalline-silicon in proper order in situ using PECVD. Then we used three-layers microcrystalline silicon (μc-Si) film as active-layer of bottom-gate TFTs at a very low temperature (~200℃). Thi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/81939691447580776798 |