Extraction of gate-bias-dependent effective channel length in MOSFETs
碩士 === 雲林科技大學 === 光學電子工程研究所 === 98 === The effective channel length and parasitic source/drain resistance of MOSFET’s are of utmost importance for circuit modeling, process monitoring and device design, and effective channel length and parasitic source/drain resistance are depended on gate-bias. Con...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/37976529361895120853 |