The Interface Effect on the Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta
碩士 === 國立中正大學 === 物理學系暨研究所 === 100 === In develop of magnetic random access memory (MRAM) device, using the perpendicular recording media has become a trend in the future. In hence, the study magnetic perpendicular anisotropy has become popular. Recently, it is found that MgO-CoFeB based MRAM struct...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65069236583559609738 |