Effects of Passivation and Channel Length Width Ratios on Indium-Yttrium Oxide Transparent Thin-Film Transistor
碩士 === 國立中正大學 === 光機電整合工程研究所 === 99 === This study fabricated indium-yttrium oxide (YIO) transparent thin-film transistor using a sol-gel solution at annealing temperature of 500°C. Discuss the effects of passivation and various channel length/width ratios on indium-yttrium oxide transparent thin-fi...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93133258701511551893 |